Silicon Carbide Application Guide
What Is Silicon Carbide Used For? Complete Guide to SiC Applications
Published June 8, 2026
Silicon carbide (SiC), as a typical wide-bandgap semiconductor and high-performance structural ceramic material, possesses multiple excellent physicochemical properties, including ultra-high hardness, excellent high-temperature stability, high thermal conductivity, low coefficient of thermal expansion, resistance to acid and alkali corrosion, and high-frequency low-loss performance. It is a core material bridging traditional industrial manufacturing with next-generation high-end information technology and new energy industries. This article systematically reviews the basic classifications and core physicochemical properties of silicon carbide, comprehensively analyzing its specific application scenarios, advantages, and technological value from seven dimensions: traditional industry, metallurgy and chemical engineering, high-end ceramics and machinery, third-generation semiconductors, new energy power, aerospace and military, and cutting-edge emerging technologies. It summarizes the current application status, industry pain points, and future development trends of silicon carbide materials, aiming to provide a systematic theoretical reference and application basis for the technological research and development, industrial implementation, and application expansion of silicon carbide materials.
With the rapid iteration of high-end manufacturing, new energy industries, and next-generation information technology, traditional silicon-based materials, alumina ceramics, and ordinary abrasives are no longer sufficient to meet the extreme operating conditions requiring high temperature, high pressure, high frequency, high efficiency, and lightweight properties. Silicon carbide, as a synthetically produced inorganic non-metallic multifunctional material, possesses the dual attributes of both a structural material and a functional material. As a structural material, its wear resistance, high-temperature resistance, and corrosion resistance far surpassing those of traditional industrial materials. As a functional material, its wide bandgap, high breakdown field strength, and high-frequency, low-loss characteristics support the technological development needs of third-generation semiconductors.
Silicon carbide has a century-long history of industrial application. Initially, it was primarily used as an abrasive and refractory material in traditional industries, in large-volume industrial markets. In recent years, with breakthroughs in advanced technologies such as single-crystal growth, precision sintering, and wafer processing, silicon carbide has gradually transformed from a traditional basic material into a core, essential material for high-end fields such as new energy vehicles, photovoltaic energy storage, 5G communications, aerospace, and quantum technology, significantly enhancing its industrial value and strategic importance. This guide distinguishes established industrial uses from specialized and emerging applications, explains how material properties influence selection, and summarizes key development trends.
Classification of Silicon Carbide
Based on differences in production processes, purity, morphology, and function, silicon carbide, commonly used in industrial and scientific research fields, can be divided into six broad categories. Different categories have highly segmented application scenarios and serve different application needs:
1) Black Silicon Carbide: Purity ≥ 98%. For some industrial refractory and metallurgical general-purpose grades, a purity of 90%~97% is sufficient. It has high toughness, strong impact resistance, and high cost-effectiveness, primarily used in traditional rough machining, wear-resistant, and refractory applications. The commonly used particle size range in industry is wide, covering 0.1μm micro-powder to 8mm grit, suitable for different rough machining conditions.
(2) Green Silicon Carbide: Purity ≥ 99%. It has dense crystals, higher hardness, a sharp cutting edge, and extremely strong chemical stability, suitable for precision grinding, hard and brittle material processing, and high-end polishing.
(3) Industrial Low-Purity Silicon Carbide (90% silicon carbide, 75% silicon carbide): These are metallurgical, general refractory, and low-cost industrial grades, representing the largest category of basic industrial silicon carbide in terms of production volume. Among them, 90% silicon carbide refers to SiC purity ≥ 90%, with controllable impurities and excellent cost performance; 75% silicon carbide refers to SiC purity ≥ 75%, which is the lowest industrial commercial grade, with relatively high impurity content and low price, suitable for extensive industrial conditions; these grades are generally selected for cost-sensitive metallurgical and refractory duties rather than precision machining, electronic, or advanced-ceramic applications.
(4) Sintered/reaction-sintered silicon carbide ceramics: dense and non-porous, high rigidity, high wear resistance, and high thermal conductivity, used in precision machinery, corrosion-resistant, and heat dissipation structural components;
(5) Silicon carbide single crystal substrates: divided into conductive and semi-insulating types, which are the core substrates for third-generation semiconductor power devices and radio frequency devices;
(6) Silicon carbide fibers/whiskers/micropowders: used as a reinforcing phase to prepare high-end composite materials, suitable for lightweight high-temperature aerospace applications.
Physicochemical Properties
All applications of silicon carbide are based on its unique physicochemical properties. Performance and application are highly intertwined. The core characteristics are as follows:
(1) Ultra-high hardness and self-sharpening: With a Mohs hardness of 9.2, second only to diamond, it can automatically shed passivating particles during grinding, maintaining a sharp cutting edge. This is the core selection criterion for industrial abrasives.
(2) Ultra-high temperature stability: Silicon carbide retains useful strength at elevated temperatures and offers excellent thermal-shock resistance. The practical temperature limit depends on grade, atmosphere, component design, and service conditions.
(3) High thermal conductivity and low thermal expansion: thermal conductivity far exceeds that of alumina ceramics and silicon-based materials, with minimal thermal deformation, suitable for high-end heat dissipation and precision optical structural components.
(4) Strong chemical inertness: resistant to many acids, alkalis, and organic solvents. Chemical compatibility still depends on temperature, concentration, pressure, and the specific SiC grade.
(5) Wide bandgap semiconductor characteristics: high breakdown field strength, fast switching speed, low high-frequency loss, and high-temperature resistance, making it a core material for high-voltage, high-frequency, and high-efficiency power electronic devices.
Traditional Industrial Applications of Silicon Carbide
1 Abrasive and Grinding Tool Industry
Abrasive and grinding tools are the earliest and largest traditional application area for silicon carbide. Relying on its high hardness, self-sharpening properties, and wear resistance, it covers the entire process of industrial grinding, cutting, and polishing. Furthermore, the purity and particle size standards of black and green silicon carbide are highly matched with the application scenarios, and their functions are clearly defined. Black silicon carbide conforms to the national standard GB/T 2480, with a general industrial grade purity of ≥98%. For ordinary refractory and coarse grinding conditions, a purity of 90%~97% is sufficient, offering outstanding cost-effectiveness and excellent toughness. With an extremely wide range of adaptable grit sizes, it is suitable for sandblasting and rough grinding of castings, using 80#~240# coarse particles (60~200μm), and for abrasive belts and sandpaper grinding, using 400#~800# medium particles (15~40μm). It is mainly used for rough grinding, rust removal, and deburring of materials such as carbon steel, cast iron, non-ferrous metals, stone, and wood. It is widely used in the manufacture of grinding wheels, belts, sandpaper, sandblasting abrasives, and grinding media, suitable for general industrial applications such as steel structure rust removal, casting refining, and hardware processing.
Green silicon carbide has a significantly higher purity standard than black silicon carbide, with a precision machining grade purity ≥99%, and an optical and semiconductor ultra-precision polishing grade purity of≥99.5%. It has extremely low impurity content and excellent cutting precision. With a high degree of particle size classification, 1000#~3000# fine particles (2~10μm) are used for grinding cemented carbide tools and molds, while 5000#~10000# ultrafine powder (0.1~2μm) is used for polishing optical glass and gemstone mirrors. The narrow particle size distribution and excellent uniformity eliminate machining scratches. It is suitable for ultra-hard and brittle materials such as cemented carbide, ceramics, optical glass, gemstones, and quartz, and is used for precision grinding, mirror polishing, and fine cutting. It is a core consumable in tool and mold precision machining, optical device manufacturing, and jewelry processing. Meanwhile, high-purity green silicon carbide ultrafine powder can be made into grinding paste and polishing fluid for ultra-precision polishing of precision instruments and semiconductor workpieces, making it an indispensable basic material for high-end precision machining.
2 High-Temperature Refractory Materials Industry
Silicon carbide is a refractory material for high-temperature industrial kilns. With its advantages of high temperature resistance, thermal shock resistance, slag erosion resistance, and uniform thermal conductivity, it is widely used in industrial equipment such as ceramic kilns, metallurgical kilns, chemical heating furnaces, waste incinerators, and coal gasification furnaces. Multiple grades of silicon carbide are suitable for various refractory applications, covering a full range of selections from low to high purity: 75% silicon carbide (SiC≥75%) is a low-end refractory grade with high impurity tolerance and extremely low cost, used only in ordinary low-temperature kilns, simple insulating castables, and low-end civilian furnace linings, without precision erosion resistance requirements; 90% silicon carbide (SiC≥90%) is the main general-purpose industrial refractory grade, with a balanced cost-performance ratio, widely used in conventional industrial kiln linings, ordinary refractory bricks, insulating refractory castables, and boiler wear-resistant liners; high-grade silicon carbide with a purity ≥97% is used in high-end metallurgical kilns, gasification furnaces, and precision kiln furniture (shelves, saggers, pushers). In terms of particle size, 75% and 90% silicon carbide refractory products use a mixture of coarse and fine sand ranging from 50μm to 5mm to ensure stable molding structures and low cost; high-end, high-purity refractory parts employ a fine composite particle size ratio. Core products include kiln shelves, saggers, pushers, furnace lining bricks, castables, thermocouple protection tubes, and high-temperature furnace tubes.
Compared to traditional clay refractory materials, silicon carbide refractory components can operate stably at temperatures above 1600℃ for extended periods, are less prone to cracking, flaking, and corrosion, significantly extending kiln lifespan and improving industrial production stability. Meanwhile, specialized crucibles, molten metal flow channels, and guide pipes for steel and non-ferrous metal smelting applications may use metallurgical refractory-grade silicon carbide with a purity of≥97%, combined with dense powder particles of 20~200μm, effectively resisting the erosion and corrosion of high-temperature molten metal, making them key supporting materials for high-temperature metallurgical equipment.
3 Application of Functional Auxiliary Materials in Metallurgical Cast Iron
In steel and cast iron production, silicon carbide of different purities forms a tiered selection system. 75% silicon carbide and 90% silicon carbide are the two grades with the largest usage in the field of metallurgical auxiliary materials. 75% silicon carbide (SiC≥75%) is an economical metallurgical auxiliary material. The content of impurities such as Fe₂O₃ and Al₂O₃ can be controlled. It is suitable for the rough deoxidation, silicon addition, and slag modification of ordinary carbon steel and ordinary cast iron. It has a significant cost advantage and is suitable for the large-scale production of ordinary castings and low-end steel products. The commonly used particle size is 1~5mm. 90% silicon carbide (SiC≥90%) has lower impurities, stronger reaction stability, and more uniform deoxidation and desulfurization effects. It can be used in the production of mid-to-high-end carbon steel, ductile iron, and precision castings. It effectively removes oxygen and sulfur impurities from molten steel, reduces inclusions and porosity defects, purifies the steel, and improves its toughness and surface quality. It can also modify slag and protect furnace linings. The mainstream particle size is 0.5~3mm, and the reaction rate is more stable. Traditionally, high-purity silicon carbide above 97% is only used in special high-end metallurgical smelting scenarios.
In the production of ductile iron and gray cast iron, 90% silicon carbide is the mainstream commercial inoculant and modifier. For stability, a purity of 97%~98% is preferred, as it refines graphite grains best, effectively inhibiting the formation of white cast iron and improving the strength, hardness, and wear resistance of castings. It is suitable for the production of most industrial castings. 75% silicon carbide is only suitable for ordinary gray cast iron and low-end castings, with limited performance improvement effects, and cannot be used for high-end ductile iron and precision cast steel parts. Both can stabilize the carbon-silicon ratio in molten iron, significantly reducing the scrap rate of ordinary castings. The particle size for cast iron inoculation is concentrated between 0.2 and 2 mm, with strict particle size classification, enabling instantaneous and uniform inoculation reactions. It is widely used in the production of civilian industrial castings such as conventional automotive castings, machine tool parts, and pipe castings.
Silicon Carbide Applications in Chemical and Precision Machinery
1 Corrosion-Resistant Equipment and Consumables in the Chemical Industry
Due to its extremely strong chemical inertness, silicon carbide can withstand various corrosive media such as hydrochloric acid, sulfuric acid, strong alkalis, and organic solvents, making it the preferred structural material for harsh chemical operating conditions. Silicon carbide for corrosion-resistant chemical components is divided into two grades: general-purpose components, such as conventional anti-corrosion pipes, packings, and linings, using sintered silicon carbide with a purity of≥98%; and high-end, high-pressure, highly corrosive, and high-precision sealing components (pump bodies, mechanical seals, precision valve cores), using high-purity reaction-sintered silicon carbide with a purity ≥99%. Impurities such as iron and aluminum are strictly controlled to prevent trace corrosion under acid and alkali conditions. The powder raw material particle size is concentrated between 1~10μm, with a narrow particle size distribution, ensuring that the sintered components are dense, non-porous, and have strong sealing performance. In industry, it is mainly used to manufacture corrosion-resistant pipes, elbows, tees, valve linings, reactor linings, stirring components, packed tower packings, and other equipment accessories. Meanwhile, silicon carbide’s wear-resistant and corrosion-resistant properties make it a core component material for chemical pumps and slurry pumps. Components such as impellers, pump casings, and mechanical seals can operate stably under corrosive and erosion conditions for extended periods, with a service life far exceeding that of metals and ordinary ceramic materials.
Furthermore, as a raw material for chemical synthesis, silicon carbide can be used in selected chemical and materials-processing applications; specifications must be confirmed for the intended process. High-purity green silicon carbide with a purity of≥99.5% must be used, with impurity content controlled at the ppm level to prevent contamination of the synthesis system. Microporous silicon carbide filter ceramics use raw materials with a purity of≥98.5%, with a controllable particle size of 0.5~5μm, allowing for precise adjustment of micropore diameter. This makes them suitable for environmentally friendly chemical applications such as chemical liquid filtration, wastewater purification, and high-temperature flue gas dust removal.
2 High-end Precision Mechanical Ceramic Components
Sintered silicon carbide and reaction-sintered silicon carbide ceramics are core wear-resistant components for precision machinery and automated equipment, with strict requirements on grade and particle size. Standard precision mechanical parts use silicon carbide raw materials with a purity of ≥98.5%, while high-end aerospace, military, and high-precision equipment parts use high-purity grade silicon carbide with a purity of ≥99.5%, eliminating uneven wear and performance degradation caused by impurities. The raw material powder particle size is stable at 1~8μm, with extremely high particle size uniformity, ensuring consistent hardness, flatness, and sealing performance of the sintered product. Silicon carbide mechanical seal rings are high-end sealing consumables for chemical pumps, oil pumps, compressors, and aerospace hydraulic pumps, offering excellent sealing performance and extremely low wear rate, suitable for high-pressure, high-speed, and corrosive operating conditions.
Meanwhile, silicon carbide bearings, bushings, guide rails, and sliders are widely used in high-speed machine tools, precision instruments, and vacuum equipment. They achieve stable operation without lubrication, possessing advantages such as maintenance-free operation, high temperature resistance, and wear resistance, and are commonly produced from high-purity, fine-grained silicon carbide when the service conditions require it. In addition, wear-resistant irregularly shaped parts such as waterjet nozzles, sandblasting nozzles, and wire guides are sintered using powder with 98%~99% purity and a particle size of 5~15μm, balancing wear resistance and forming precision. These are widely used in niche fields such as waterjet cutting, sandblasting equipment, textile machinery, and fluid control equipment.
3 High Thermal Conductivity Heat Dissipation Materials
Silicon carbide ceramics have a much higher thermal conductivity than alumina ceramics and ordinary silicon-based materials, and an extremely low coefficient of thermal expansion, making them ideal heat dissipation substrates for high-power devices. Different purity and particle size standards are used for different heat dissipation scenarios. Conventional LED and general industrial control heat dissipation substrates use silicon carbide with a purity ≥98.5% and a powder particle size of 3~10μm; high-end lasers, server chips, and semiconductor power device heat dissipation substrates use high-purity silicon carbide with a purity ≥99.5% and a particle size of 1~5μm with an extremely narrow distribution, ensuring high material density, uniform thermal conductivity, and good thermal stability. This type of material can quickly dissipate heat from equipment, reduce device operating temperatures, improve equipment stability and lifespan, and address the high-temperature heat-dissipation problem for high-end electronic equipment.
Silicon Carbide Semiconductors and High-End Applications in New Energy
1 Third-Generation Power Semiconductor Devices
Silicon carbide is a core material for third-generation semiconductors. Compared to traditional silicon-based devices, it offers advantages such as high breakdown voltage, fast switching speed, low conduction loss, high temperature resistance, and miniaturization, helping reduce switching and conduction losses in suitable high-voltage and high-frequency systems. Semiconductor power devices have extremely high purity requirements. The purity of conductive silicon carbide substrate raw materials is ≥99.99% (4N electronic grade), while aerospace and high-end industrial control special power devices require 99.999% (5N high purity). Heavy metal impurities and vacancy defects are strictly controlled to the ppb level, with no powder particle size index, and single-crystal low-defect and high-uniformity as the core standards. Conductive silicon carbide substrates can be used to fabricate core devices such as SiC Schottky diodes, SiC MOSFETs, and power modules, comprehensively covering new energy power scenarios.
In the field of new energy vehicles, silicon carbide devices are used in main drive inverters, on-board chargers, and DC/DC converters, which can reduce overall vehicle power consumption, increase driving range, and reduce the size and weight of electronic control systems. In the field of photovoltaic energy storage, they are used in photovoltaic inverters and energy storage converters, where lower switching losses can improve system efficiency and thermal management. In the field of charging piles, they support the implementation of high-power supercharging technology, enabling high-voltage, high-current fast charging. Furthermore, silicon carbide power devices are widely used in high-voltage DC transmission, rail transit converters, industrial high-frequency power supplies, UPS power supplies, and other power equipment, serving as a core supporting material for smart grids and new energy systems.
2 Radio Frequency Communication Semiconductor Devices
Semi-insulating silicon carbide substrates are the core substrate for 5G and 6G millimeter-wave communication and radar systems. The purity requirement is the highest standard in the entire field, reaching 99.999% (5N grade) ultra-high purity, with impurity ions and lattice defects almost eliminated, preventing high-frequency signal loss. Silicon carbide (SiC) possesses characteristics such as high frequency, low loss, good insulation, high temperature resistance, and radiation resistance. RF power amplifiers, filters, RF switches, and antenna units fabricated based on these characteristics can meet the communication requirements of high frequency, high speed, and low latency, and are widely used in macro base stations, micro base stations, and satellite communication equipment. Simultaneously, in fields such as automotive millimeter-wave radar, military detection radar, and weather radar, SiC RF devices can improve radar detection accuracy and stability, adapting to complex outdoor and military operating conditions.
3 Optoelectronics and Special Sensor Applications
SiC has excellent thermal conductivity and high lattice matching, making it suitable as a substrate material for high-power blue-green LEDs. LED-specific SiC substrates have a purity ≥99.9% (3N grade), with uniform and controllable impurities and no coarse lattice defects. Compared to traditional sapphire substrates, it offers better heat dissipation, lower light decay, and longer device lifespan, making it suitable for high-end lighting, displays, automotive light sources, and other applications. Silicon carbide used in high-end laser equipment and optical components has a purity of ≥99.95%, with uniform powder matrix particle size, no particle defects, and strong resistance to laser damage. It is suitable for the fabrication of core components such as high-end laser resonator cavities and optical windows.
Furthermore, silicon carbide for high-temperature sensors has a purity of ≥99.5%, with dense and stable material and extremely low impurities. It can withstand temperatures above 600℃ and can be used to fabricate high-temperature, pressure, and gas sensors, widely applied in extreme conditions such as aero-engines, industrial high-temperature kilns, and automotive exhaust gas detection, overcoming the technical shortcomings of traditional sensors that cannot withstand high temperatures.
High-End Applications in Aerospace, Military, and Optics
1 High-Temperature Structural Components for Aerospace Applications
Aerospace-grade silicon carbide composite materials and high-temperature structural components have stringent requirements for purity and particle size, with an overall purity ≥99.5%, and high-end aerospace-grade purity reaching over 99.9%. Specifically, SiC-reinforced powder particles are concentrated in the 1~5μm range, and the fiber-reinforced phase is uniform in size and free of agglomeration defects. Silicon carbide ceramic matrix composites and silicon carbide-reinforced metal matrix composites combine the advantages of lightweight, high strength, ultra-high-temperature resistance, and thermal shock resistance, making them high-end structural materials for aerospace applications. In the aviation field, they are used to manufacture aero-engine flame tubes, exhaust nozzles, and thermal insulation components, capable of withstanding ultra-high temperature exhaust gas erosion, improving engine efficiency and reliability. In the aerospace field, they are used in rocket engine nozzle throat liners, spacecraft thermal protection tiles, and reentry vehicle thermal insulation components, capable of withstanding extreme temperature differences and high-speed airflow erosion in space. Simultaneously, silicon carbide heat dissipation and radio frequency devices are fully compatible with spaceborne equipment and airborne avionics systems, ensuring the stable operation of high-end aerospace equipment.
2 National Defense and Military Protection Equipment
Military-grade protective silicon carbide ceramic armor utilizes high-purity, dense silicon carbide with a purity ≥99.5%. The raw material powder has a particle size of 2~8μm, with uniform particle size distribution. After sintering, the material is dense and exhibits strong impact resistance. Compared to traditional metal armor, it significantly reduces weight and offers superior ballistic protection. It is widely used in individual soldier ballistic plates, armored vehicles, and bulletproof vehicle armor, serving as a core material for modern lightweight military protection. Simultaneously, the silicon carbide semiconductor materials used in military radar, communication equipment, field power supplies, and military power modules typically require very high-purity grades, ensuring stability under extreme operating conditions and significantly improving the endurance, environmental adaptability, and reliability of military equipment.
3 Applications in High-End Optics and Precision Instruments
High-end optical silicon carbide is one of the categories with the highest precision requirements. Silicon carbide used in astronomical, satellite, and laser optical devices has a purity of ≥99.95%, is virtually free of impurities and lattice defects, and has a raw material powder particle size of 0.5~3μm with an ultra-narrow particle size distribution, ensuring extremely low thermal expansion coefficient, ultra-high rigidity, and mirror flatness in the sintered finished product. This material is used in selected high-end optical systems and can be used to manufacture core components such as primary mirrors for large astronomical telescopes, satellite optical lenses, laser equipment mirrors, and optical windows. In precision equipment such as space optics, precision spectrometers, and interferometers, silicon carbide optical components can achieve high-precision imaging, eliminate mirror deformation caused by temperature changes, and significantly improve the detection and observation accuracy of precision optical equipment.
Emerging Frontier Applications and Industry Development Trends
1 Emerging Frontier Application Scenarios
With continuous breakthroughs in materials technology, the application boundaries of silicon carbide are constantly expanding, and ultra-high-purity silicon carbide materials are being used in cutting-edge fields. Silicon carbide used in quantum technology and nuclear energy fields has a purity of ≥99.99% (4N and above), with extremely controllable impurities and defects, making it suitable for core scenarios such as quantum bit fabrication, high-temperature structural components in nuclear reactors, and fuel cladding; AR/VR optical components use 99.95% high-purity silicon carbide with ultra-fine uniform particle size (0.5~2μm), ensuring thin, light-transmitting, and heat-dissipating lenses; in the biomedical field, medical-grade silicon carbide has a purity of ≥99.5%, is free of harmful impurities, and has excellent biocompatibility, making it suitable for manufacturing medical wear-resistant and corrosion-resistant ceramic parts and biological filter carriers.
2 Existing Pain Points in the Industry
The current silicon carbide industry has a clear tiered structure: 75% and 90% silicon carbide, and other low-to-medium purity grades, boast mature technology, large production capacity, and low cost, perfectly suited for traditional applications such as metallurgical deoxidation, general refractories, and rough grinding, with a well-established standardized mass production system; the traditional 97%–99.5% high-purity abrasives, refractories, and ceramic materials markets are highly competitive; however, in the fields of high-end single-crystal substrates, large-size wafers, precision sintered ceramics, and high-end device packaging, there are problems such as high mass production costs, low yield rates, reliance on imported core equipment, and insufficient precision in particle size control and impurity control for ultra-high purity (4N/5N grade) silicon carbide, hindering the large-scale adoption of high-end silicon carbide materials. Furthermore, the industry’s selection standards for refined application scenarios for 75%, 90%, 97%, 99%, and higher grades of silicon carbide are not yet fully unified, and the standardization of operating condition adaptation is insufficient.
3 Future Development Trends
The silicon carbide industry will exhibit three major development directions in the future: First, high-end development, with continuous breakthroughs in large-size, low-defect ultra-high purity silicon carbide single crystal growth technology, and a continuous decrease in the cost of 4N/5N grade high-purity materials and ultra-fine narrow-distribution particle size powders, enabling large-scale substitution in new energy, semiconductor, and quantum fields; Second, composite development, based on silicon carbide powder with precise purity and particle size matching, combined with carbon fiber, metals, and resins for composite modification, expanding into more lightweight, high-temperature resistant, and wear-resistant new composite material applications; Third, refined application scenarios, customizing silicon carbide categories with specific purity and particle size specifications for different industry working conditions, achieving precise adaptation of material parameters to application scenarios. Simultaneously, with the continuous development of new energy, the digital economy, and high-end equipment manufacturing, silicon carbide will gradually replace traditional silicon-based, ceramic, and metal materials, becoming a fundamental strategic material for high-end manufacturing.
